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| Semiconductor STB1132 PNP Silicon Transistor Description * Medium power amplifier Features * PC(Collector dissipation)=2W(Ceramic substate of 40x40x0.8mm used) * Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) * Complementary pair with STD1664 Ordering Information Type NO. STB1132 Marking A1 : hFE rank, monthly code Package Code SOT-89 Outline Dimensions 4.0 0.500.1 2.5 -0.3 +0.5 unit : mm -0.3 +0.2 1.000.3 3 1.820.05 -0.1 +0.2 2 0.520.05 0.15 Typ. 4.5 1 0.420.05 1.5 -0.1 +0.2 0~0.1 -0.02 +0.04 PIN Connections 1. Base 2. Collector 3. Emitter KST-8001-002 0.42 1 STB1132 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : When mounted on 40x40x0.8mm ceramic substate (Ta=25C) Symbol VCBO VCEO VEBO IC PC PC * Ratings -40 -32 -5 -1 0.5 2 150 -55~150 Unit V V V A W C C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO hFE* VCE(sat) fT Cob Test Condition IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V, IE=0 VCE=-30V, IC=0 VEB=-4V, IC=0 VCE=-3V, IC=-0.1A IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -40 -32 -5 100 -0.2 150 20 -0.1 -0.1 -0.1 320 -0.8 30 Unit V V V A A A V MHz pF * : hFE rank / O : 100 ~ 200, Y : 160 ~ 320 KST-8001-002 2 STB1132 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC KST-8001-002 3 |
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